4H-SiC PIN-type Semiconductor Detector for Fast Neutron Detection
نویسندگان
چکیده
منابع مشابه
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متن کاملElectrically active point defects in n-type 4H–SiC
An electrically active defect has been observed at a level position of ;0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ;5310 214 cm in epitaxial layers of 4H–SiC grown by vapor phase epitaxy with a concentration of approximately 1310 cm. Secondary ion mass spectrometry revealed no evidence of the transition metals Ti, V, and Cr. Furthermore, after elec...
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ژورنال
عنوان ژورنال: Progress in Nuclear Science and Technology
سال: 2011
ISSN: 2185-4823
DOI: 10.15669/pnst.1.237